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Dual Threshold Voltages and Power-Gating Design Flows Offer Good Results  
Publication: EDN Magazine
Contributor: Synopsys, Inc.
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February 2, 2006 -- Design-optimization methodologies and flows that use gates with two threshold voltages (VTH) can achieve excellent results for both power and timing with a high degree of automation. This dual-VTH approach has become crucial for VDSM (very-deep-submicron) chips, in which reduced VTH not only improves performance, but also increases static (leakage) power.

In fact, leakage power increases exponentially with the technology scaling and reaches 50% of chip power at 65 nm. This dramatic increase in leakage power is unacceptable for most designs, whether or not they run from battery power. As a result, most designs can benefit from design-optimization flows that balance the trade-offs between performance and leakage power.

There are three popular flows for optimizing performance and leakage power based on design requirements. These flows target minimum leakage, best performance, and optimum chip area and tool runtime for a design in power-on mode. Because the design still consumes leakage power in standby mode, the flows also include methods for minimizing standby leakage power.

By Kaijian Shi. (Shi is a principal consultant with Synopsys Professional Services.)


This brief introduction has been excerpted from the original copyrighted article.


View the entire article on the EDN Magazine website.

Read more about
Synopsys, Inc.
on SOCcentral.com

Keywords: EDN Magazine, Synopsys, power analysis, power optimiazation, leakage power, design flows, EDA tools,
575/17863 2/2/2006 8811 729


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